Invention Grant
- Patent Title: Integrated circuit having a high cell density
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Application No.: US15468281Application Date: 2017-03-24
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Publication No.: US10157840B2Publication Date: 2018-12-18
- Inventor: Sheng-Hsiung Chen , Chung-Hsing Wang , Fong-yuan Chang , Lee-Chung Lu , Li-Chun Tien , Po-Hsiang Huang , Shao-huan Wang , Ting Yu Chen , Yen-Pin Chen , Chun-Chen Chen , Tzu-Hen Lin , Tai-Yu Cheng
- Applicant: Taiwan Semiconductor Manufacturing Company Limited
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee: Taiwan Semiconductor Manufacturing Company Limited
- Current Assignee Address: TW Hsinchu
- Agency: Jones Day
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/528 ; H01L23/522 ; G06F17/50 ; H01L27/088 ; H03K19/20

Abstract:
An integrated circuit includes a cell that is between a substrate and a supply conductive line and that includes a source region, a contact conductive line, a power conductive line, and a power via. The contact conductive line extends from the source region. The power conductive line is coupled to the contact conductive line. The power via interconnects the supply conductive line and the power conductive line.
Public/Granted literature
- US20180158776A1 Integrated Circuit Having a High Cell Density Public/Granted day:2018-06-07
Information query
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