Invention Grant
- Patent Title: MOSFET with selective dopant deactivation underneath gate
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Application No.: US14855477Application Date: 2015-09-16
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Publication No.: US10157985B2Publication Date: 2018-12-18
- Inventor: Dhanyakumar Mahaveer Sathaiya , Kai-Chieh Yang , Wei-Hao Wu , Ken-Ichi Goto , Zhiqiang Wu , Yuan-Chen Sun
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L29/16 ; H01L21/265
Abstract:
A metal-oxide-semiconductor field-effect transistor (MOSFET) device includes a channel region comprising dopants of a first type. The MOSFET device further includes a gate dielectric over the channel region, and a gate over the gate dielectric. The MOSFET device further includes a source comprising dopants of a second type, and a drain comprising dopants of the second type, wherein the channel region is between the source and the drain. The MOSFET device further includes a deactivated region underneath the gate, wherein dopants within the deactivated region are deactivated.
Public/Granted literature
- US20160005817A1 MOSFET WITH SELECTIVE DOPANT DEACTIVATION UNDERNEATH GATE Public/Granted day:2016-01-07
Information query
IPC分类:
