An exemplary method for forming a semiconductor device includes etching a top portion etching a top portion of a first semiconductor fin to produce a recessed top portion of the fin. A dielectric layer is deposited over the first semiconductor fin and an adjacent isolation structure. The top surface of the recessed top portion is exposed where a resulting pair of spacers remains on either side of the recessed top portion, the spacers being in contact with sidewalls of the recessed fin. The fin is further recessed to produce a recessed top surface of the first semiconductor fin, the recessed top surface being below a top surface of the isolation structure. A source/drain material is epitaxially grown in the recess between the pair of spacers and expands laterally over the pair of spacers.