A method of producing optoelectronic semiconductor components includes A) providing a semiconductor layer sequence on a carrier top of a carrier, B) patterning the semiconductor layer sequence such that at least one mesa structure is formed with side faces, C) applying at least a portion of a cladding to the semiconductor layer sequence with the mesa structure by a conformal coating method such that all free surfaces are covered by the cladding), and D) anisotropically etching the cladding such that a flank coating is created from the cladding, which coating is limited with a tolerance of at most 200% of a mean thickness of the flank coating to the side faces of the mesa structure and completely encloses the mesa structure, wherein step D) takes place without an additional etching mask for the anisotropic etching.