Invention Grant
- Patent Title: Composition for insulator of thin film transistor, insulator and organic thin film transistor prepared thereby
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Application No.: US15581413Application Date: 2017-04-28
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Publication No.: US10158078B2Publication Date: 2018-12-18
- Inventor: Yun Ho Kim , Sung Mi Yoo , So Hee Kim , Mihye Yi , Jae Won Ka , Jinsoo Kim , Jong Chan Won , Kwang Suk Jang
- Applicant: Korea Research Institute of Chemical Technology
- Applicant Address: KR Daejeon
- Assignee: Korea Research Institute of Chemical Technology
- Current Assignee: Korea Research Institute of Chemical Technology
- Current Assignee Address: KR Daejeon
- Agency: Leydig, Voit & Mayer, Ltd.
- Priority: KR10-2016-0058108 20160512
- Main IPC: C08L37/00
- IPC: C08L37/00 ; H01L51/00 ; H01L51/05 ; H01L51/10

Abstract:
The present invention relates to a composition for an insulator of a thin film transistor, an insulator and an organic thin film transistor comprising the same. The insulator of a thin film transistor prepared with the composition of the present invention displays an excellent permittivity along with a low surface energy, and the organic thin film transistor comprising the same displays an improved organic semiconductor morphology formed on the top surface of the insulator, so that it can bring the effect of reducing leakage current density, improving charge carrier mobility, and improving current on/off ratio.
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