Invention Grant
- Patent Title: Low impedance adaptive bias scheme for power amplifier
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Application No.: US15473516Application Date: 2017-03-29
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Publication No.: US10158327B2Publication Date: 2018-12-18
- Inventor: Woonyun Kim
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated/Seyfarth Shaw LLP
- Agent Alan M. Lenkin
- Main IPC: H03F1/02
- IPC: H03F1/02 ; H03F3/195 ; H03F3/24 ; H03F3/50 ; H04B1/04 ; H03F3/19 ; H04B1/38

Abstract:
An adaptive bias circuit for a power amplifier may include a terminal node coupled to the power amplifier. The adaptive bias circuit may also include a low impedance bias circuit coupled to the terminal node. The adaptive bias circuit may further include a high drive bias circuit coupled to the low impedance bias circuit through the terminal node. A separation device may be arranged between the low impedance bias circuit and the high drive bias circuit.
Public/Granted literature
- US20180123517A1 LOW IMPEDANCE ADAPTIVE BIAS SCHEME FOR POWER AMPLIFIER Public/Granted day:2018-05-03
Information query
IPC分类: