Invention Grant
- Patent Title: Multi-layered aluminum oxide capacitor
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Application No.: US14816182Application Date: 2015-08-03
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Publication No.: US10163567B2Publication Date: 2018-12-25
- Inventor: Bum Mo Ahn , Seung Ho Park
- Applicant: POINT ENGINEERING CO., LTD.
- Applicant Address: KR Asan-si, Chungcheongnam-do
- Assignee: POINT ENGINEERING CO., LTD.
- Current Assignee: POINT ENGINEERING CO., LTD.
- Current Assignee Address: KR Asan-si, Chungcheongnam-do
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2014-0099882 20140804
- Main IPC: H01G4/008
- IPC: H01G4/008 ; H01G4/26 ; H01G4/12 ; H01G4/30 ; H01G4/232

Abstract:
The present invention relates to a multi-layered aluminum oxide capacitor comprising an aluminum substrate; a plurality of aluminum oxide layer formed in at least a portion of on both sides or one side of the substrate with respect to the aluminum substrate; and a plurality of electrode layers formed on the aluminum oxide layers. According to the present invention, manufacturing process is more simplified since Al2O3 insulation layer is formed by anodizing the aluminum layer without forming an extra insulation layer after forming the aluminum layer, so that the manufacturing cost can be reduced, and also a multi-layered capacitor having a high capacitance and a high reliability can be provided by stacking capacitors comprising a plurality of aluminum oxide layers using a more simplified process according to the present invention.
Public/Granted literature
- US20160035489A1 MULTI-LAYERED ALUMINUM OXIDE CAPACITOR Public/Granted day:2016-02-04
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