- Patent Title: MOSFETs with channels on nothing and methods for forming the same
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Application No.: US15659223Application Date: 2017-07-25
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Publication No.: US10163683B2Publication Date: 2018-12-25
- Inventor: Georgios Vellianitis , Mark van Dal , Blandine Duriez
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L21/764 ; H01L21/762 ; H01L21/306 ; H01L29/06 ; H01L29/10 ; H01L29/66 ; H01L29/78 ; H01L29/165
Abstract:
A method includes performing an epitaxy to grow a semiconductor layer, which includes a top portion over a semiconductor region. The semiconductor region is between two insulation regions that are in a substrate. The method further includes recessing the insulation regions to expose portions of sidewalls of the semiconductor region, and etching a portion of the semiconductor region, wherein the etched portion of the semiconductor region is under and contacting a bottom surface of the semiconductor layer, wherein the semiconductor layer is spaced apart from an underlying region by an air gap. A gate dielectric and a gate electrode are formed over the semiconductor layer.
Public/Granted literature
- US20170338144A1 MOSFETs with Channels on Nothing and Methods for Forming the Same Public/Granted day:2017-11-23
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