Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15785531Application Date: 2017-10-17
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Publication No.: US10163740B2Publication Date: 2018-12-25
- Inventor: Bunji Yasumura , Fumio Tsuchiya , Hisanori Ito , Takuji Ide , Naoki Kawanabe , Masanao Sato
- Applicant: Renesas Electronics Corporation
- Applicant Address: unknown Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: unknown Tokyo
- Agency: Shapiro, Gabor and Rosenberger, PLLC
- Priority: JP2009-121857 20090520
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/00 ; H01L23/31 ; H01L23/498
Abstract:
A technique is provided that can prevent cracking of a protective film in the uppermost layer of a semiconductor device and improve the reliability of the semiconductor device. Bonding pads formed over a principal surface of a semiconductor chip are in a rectangular shape, and an opening is formed in a protective film over each bonding pad in such a manner that an overlapping width of the protective film in a wire bonding region of each bonding pad becomes wider than an overlapping width of the protective film in a probe region of each bonding pad.
Public/Granted literature
- US20180040521A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-02-08
Information query
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