Invention Grant
- Patent Title: Semiconductor device with post passivation structure and fabrication method therefor
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Application No.: US15642837Application Date: 2017-07-06
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Publication No.: US10163831B2Publication Date: 2018-12-25
- Inventor: Gulbagh Singh , Chih-Ming Lee , Chi-Yen Lin , Wen-Chang Kuo , C. C. Liu
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Hauptman Ham, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L29/00 ; H01L23/00 ; H01L23/522 ; H01L23/58 ; H01L23/528 ; H01L21/78 ; H01L23/544 ; G06F17/50 ; H01L29/06 ; H01L23/31 ; H01L23/532 ; H01L21/66
Abstract:
A method of fabricating a semiconductor device includes forming a first contact pad and a second contact pad over a first passivation layer, depositing a first buffer layer over the first contact pad and the second contact pad, and depositing a second buffer layer over the first buffer layer and the second contact pad. The first contact pad is in a circuit region and the second contact pad is in a non-circuit region. An edge of the second contact pad is exposed and a periphery of the first contact pad and an edge of the second contact pad are covered by the first buffer layer.
Public/Granted literature
- US20180315723A1 SEMICONDUCTOR DEVICE WITH POST PASSIVATION STRUCTURE AND FABRICATION METHOD THEREFOR Public/Granted day:2018-11-01
Information query
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