Invention Grant
- Patent Title: Package-on-package (PoP) device with integrated passive device in a via
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Application No.: US15477941Application Date: 2017-04-03
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Publication No.: US10163873B2Publication Date: 2018-12-25
- Inventor: Ching-Wen Hsiao , Chen-Shien Chen
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee: Taiwan Semiconductor Manufacturing Company
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L25/10
- IPC: H01L25/10 ; H01L23/64 ; H01L49/02 ; H01L21/48 ; H01L23/538 ; H01L23/14 ; H01L21/56 ; H01L23/00 ; H01L25/00 ; H01L23/498
Abstract:
A package for a use in a package-on-package (PoP) device and a method of forming is provided. The package includes a substrate, a polymer layer formed on the substrate, a first via formed in the polymer layer, and a material disposed in the first via to form a first passive device. The material may be a high dielectric constant dielectric material in order to form a capacitor or a resistive material to form a resistor.
Public/Granted literature
- US20170207207A1 Package-on-Package (PoP) Device with Integrated Passive Device in a Via Public/Granted day:2017-07-20
Information query
IPC分类:
