Invention Grant
- Patent Title: Three-layer stacked image sensor
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Application No.: US15426350Application Date: 2017-02-07
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Publication No.: US10163946B2Publication Date: 2018-12-25
- Inventor: Young-Jun Kwon
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0067039 20160531
- Main IPC: H01L27/14
- IPC: H01L27/14 ; H01L27/146 ; H04N5/378

Abstract:
An image sensor may include a lower device that includes logic transistors, an intermediate device that is formed over the lower device and includes a Correlated Double Sampling (CDS) circuit and a capacitor, and an upper device that is formed over the intermediate device and includes a photodiode, a floating diffusion region, and a transfer gate electrode.
Public/Granted literature
- US20170345854A1 THREE-LAYER STACKED IMAGE SENSOR Public/Granted day:2017-11-30
Information query
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