Invention Grant
- Patent Title: Image sensor and method for manufacturing the same
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Application No.: US14942441Application Date: 2015-11-16
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Publication No.: US10163959B2Publication Date: 2018-12-25
- Inventor: Yuichiro Yamashita , Chun-Hao Chuang , Hirofumi Sumi
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L27/146
- IPC: H01L27/146

Abstract:
An image sensor structure and a method for forming the same are provided. The image sensor structure includes a substrate having a front side and a backside and a light-sensing region formed in the substrate. The image sensor structure further includes a front side isolation structure formed at the front side of the substrate and a backside isolation structure formed at the back side of the substrate.
Public/Granted literature
- US20170141145A1 IMAGE SENSOR AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2017-05-18
Information query
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