A semiconductor structure and a method for fabricating the same. The semiconductor structure includes a gate stack disposed on a substrate. A gate contact is disposed in contact with an end portion of the gate stack. An air gap spacer is disposed in contact with a portion of the gate stack. The end portion of the gate stack is absent the air gap spacer. The method includes forming a gate contact in contact with a gate stack. A spacer surrounding at least a portion of the gate stack is removed after the gate contact has been formed. The removal of the spacer forms a trench surrounding the gate stack and stopping at the gate contact. An air gap spacer is formed within the trench.