Invention Grant
- Patent Title: Semiconductor device and a method for forming a semiconductor
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Application No.: US15210106Application Date: 2016-07-14
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Publication No.: US10164019B2Publication Date: 2018-12-25
- Inventor: Roland Rupp , Guenther Ruhl , Hans-Joachim Schulze
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102015111453 20150715
- Main IPC: H01L29/15
- IPC: H01L29/15 ; H01L29/16 ; H01L29/36 ; H01L29/08 ; H01L29/417 ; H01L21/02 ; H01L21/265 ; H01L21/324 ; H01L29/41
Abstract:
A method for forming a semiconductor device includes forming at least one graphene layer on a surface of a semiconductor substrate. The method further includes forming a silicon carbide layer on the at least one graphene layer.
Public/Granted literature
- US20170018614A1 Semiconductor Device and a Method for Forming a Semiconductor Device Public/Granted day:2017-01-19
Information query
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