Invention Grant
- Patent Title: Semiconductor structure with protection layer
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Application No.: US15434343Application Date: 2017-02-16
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Publication No.: US10164063B2Publication Date: 2018-12-25
- Inventor: Chih-Wei Chiang , Po-Hsiung Leu , Ding-I Liu
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L21/82 ; H01L29/66 ; H01L29/423 ; H01L29/49 ; H01L27/088 ; H01L21/8234
Abstract:
The method for forming a semiconductor structure includes forming a protection layer having a first portion and a second portion over a substrate and forming a dummy gate layer over the first portion and the second portion of the protection layer. The method for forming a semiconductor structure further includes patterning the dummy gate layer to form a dummy gate structure over the first portion of the protection layer and forming a spacer on a sidewall of the dummy gate structure over a second portion of the protection layer. The method for forming a semiconductor structure further includes replacing the first portion of the protection layer and the dummy gate structure by a gate dielectric layer and a gate electrode layer. In addition, a thickness of the protection layer is greater than a thickness of the gate dielectric layer.
Public/Granted literature
- US20180166560A1 SEMICONDUCTOR STRUCTURE WITH PROTECTION LAYER Public/Granted day:2018-06-14
Information query
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