Invention Grant
- Patent Title: FinFET structure and method for fabricating the same
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Application No.: US15785764Application Date: 2017-10-17
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Publication No.: US10164068B2Publication Date: 2018-12-25
- Inventor: Kuo-Cheng Ching , Guan-Lin Chen , Chao-Hsiung Wang , Chi-Wen Liu
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L21/306
Abstract:
A method comprises removing a portion of a fin to form a trench over a lower portion of the fin, wherein the lower portion is formed of a first semiconductor material, growing a second semiconductor material in the trench to form a middle portion of the fin, forming a first carbon doped layer over the middle portion of the fin, growing the first semiconductor material over the first carbon doped layer to form an upper portion of the fin, replacing outer portions of the upper portion of the fin with a second carbon doped layer and drain/source regions, wherein the first carbon doped layer and the second carbon doped layer are separated by the upper portion of the fin and applying a thermal oxidation process to the middle portion of the fin to form an oxide outer layer.
Public/Granted literature
- US20180040720A1 FINFET Structure and Method for Fabricating the Same Public/Granted day:2018-02-08
Information query
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