Invention Grant
- Patent Title: Devices including gate spacer with gap or void and methods of forming the same
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Application No.: US15905177Application Date: 2018-02-26
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Publication No.: US10164069B2Publication Date: 2018-12-25
- Inventor: Kuo-Cheng Ching , Ching-Wei Tsai , Chi-Wen Liu , Ying-Keung Leung
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater Matsil, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/78 ; H01L21/02 ; H01L21/283
Abstract:
Devices and structures that include a gate spacer having a gap or void are described along with methods of forming such devices and structures. In accordance with some embodiments, a structure includes a substrate, a gate stack over the substrate, a contact over the substrate, and a spacer disposed laterally between the gate stack and the contact. The spacer includes a first dielectric sidewall portion and a second dielectric sidewall portion. A void is disposed between the first dielectric sidewall portion and the second dielectric sidewall portion.
Public/Granted literature
- US20180190796A1 Devices Including Gate Spacer with Gap or Void and Methods of Forming the Same Public/Granted day:2018-07-05
Information query
IPC分类:
