A silicon carbide semiconductor device includes an ohmic electrode and a Schottky electrode that are in contact with the drain electrode respectively on the drain electrode and are next to each other; a first conductivity type first withstand voltage holding region in contact with the ohmic electrode on the ohmic electrode; a second conductivity type second withstand voltage holding region in contact with the Schottky electrode on the Schottky electrode and is next to the first withstand voltage holding region; a second conductivity type well region in contact onto the first and second withstand voltage holding regions; a first conductivity type source region selectively provided on a surface layer of the well region; and a gate electrode opposite to a channel region defined by the well region sandwiched between the source region and the first withstand voltage holding region, with a gate oxide film interposed therebetween.