Invention Grant
- Patent Title: Semiconductor device and method of manufacturing same
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Application No.: US15428350Application Date: 2017-02-09
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Publication No.: US10164087B2Publication Date: 2018-12-25
- Inventor: Senichirou Nagase , Tsuyoshi Kachi , Yoshinori Hoshino
- Applicant: RENESAS ELECTRONICS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Tokyo
- Agency: McDermott Will & Emery LLP
- Priority: JP2016-023767 20160210
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/06 ; H01L29/10 ; H01L29/40 ; H01L29/66 ; H01L21/265
Abstract:
To provide a semiconductor device equipped with a snubber portion having an improved withstand voltage and capable of reducing a surge voltage at turn-off of an insulated gate field effect transistor portion. The concentration of a first conductivity type impurity in a snubber semiconductor region is greater than that in a drift layer. The thickness of a snubber insulating film between the snubber semiconductor region and a snubber electrode is greater than that of a gate insulating film between a gate electrode and a body region.
Public/Granted literature
- US20170229572A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME Public/Granted day:2017-08-10
Information query
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