Invention Grant
- Patent Title: Light emitting diode chip
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Application No.: US15424544Application Date: 2017-02-03
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Publication No.: US10164152B2Publication Date: 2018-12-25
- Inventor: Tzu-Yang Lin , Yu-Hung Lai , Yun-Li Li , Yu-Yun Lo
- Applicant: PlayNitride Inc.
- Applicant Address: TW Tainan
- Assignee: PlayNitride Inc.
- Current Assignee: PlayNitride Inc.
- Current Assignee Address: TW Tainan
- Agency: J.C. Patents
- Priority: TW105140787A 20161209
- Main IPC: H01L33/20
- IPC: H01L33/20 ; H01L25/075 ; H01L33/38

Abstract:
A light emitting diode (LED) chip has an inclined notch. The inclined notch has at least one inclined surface. The LED chip includes a first-type doped semiconductor layer, a second-type doped semiconductor layer, a light emitting layer, a first electrode, and a second electrode. The light emitting layer is located between the first-type doped semiconductor layer and the second-type doped semiconductor layer. The inclined surface is inclined with respect to the light emitting layer. The first electrode is electrically connected to the first-type doped semiconductor layer. The second electrode is electrically connected to the second-type doped semiconductor layer. The inclined notch is disposed in the light emitting layer.
Public/Granted literature
- US20180166606A1 LIGHT EMITTING DIODE CHIP Public/Granted day:2018-06-14
Information query
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