- Patent Title: Sensing and detection of ESD and other transient overstress events
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Application No.: US15166683Application Date: 2016-05-27
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Publication No.: US10164426B2Publication Date: 2018-12-25
- Inventor: Michael A. Stockinger , Gregory C. Edgington , James R. Feddeler , Xiang Li , Richard W. Moseley , Mihir Suchak
- Applicant: FREESCALE SEMICONDUCTOR, INC.
- Applicant Address: US TX Austin
- Assignee: NXP USA, Inc.
- Current Assignee: NXP USA, Inc.
- Current Assignee Address: US TX Austin
- Main IPC: H02H9/00
- IPC: H02H9/00 ; H02H9/04 ; H02H1/00 ; G01R31/28 ; H01L21/66 ; G01R31/00 ; H01L27/02

Abstract:
An integrated circuit includes an I/O pad and a protection device coupled to the I/O pad and a first supply node. A transient event detector includes a latch; a first transistor having a first current electrode coupled to the I/O pad, a control electrode coupled to a first supply node, and a second current electrode coupled to a data input of the latch, wherein the latch is configured to store an indication that a transient event occurred. An event level sensor includes a first transistor having a first current electrode coupled to the I/O pad, a control electrode coupled to the protection device, and a second current electrode coupled to a load circuit; a rectifier device coupled between the second current electrode and a capacitor; a second transistor having a control electrode coupled to the capacitor; and an output circuit configured to place a current on a first sense bus proportional to a current through the load circuit.
Public/Granted literature
- US20170346280A1 SENSING AND DETECTION OF ESD AND OTHER TRANSIENT OVERSTRESS EVENTS Public/Granted day:2017-11-30
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