Invention Grant
- Patent Title: Preparation method of doped vanadium dioxide powder
-
Application No.: US14697481Application Date: 2015-04-27
-
Publication No.: US10167223B2Publication Date: 2019-01-01
- Inventor: Yanfeng Gao , Chuanxiang Cao , Lei Dai , Hongjie Luo , Minoru Kanehira
- Applicant: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES
- Applicant Address: CN Shanghai
- Assignee: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee: SHANGHAI INSTITUTE OF CERAMICS, CHINESE ACADEMY OF SCIENCES
- Current Assignee Address: CN Shanghai
- Agency: Alleman Hall Creasman & Tuttle LLP
- Priority: CN201110024215 20110121; CN201110024229 20110121
- Main IPC: C03C3/12
- IPC: C03C3/12 ; C03C4/08 ; C01G31/02 ; C01G39/00 ; C01G49/00 ; B82Y30/00 ; B82Y40/00
Abstract:
The present invention relates to a hydrothermal method for preparing a doped vanadium dioxide powder, the doped powder having a chemical composition of V1-XMXO2, 0
Public/Granted literature
- US20150251948A1 PREPARATION METHOD OF DOPED VANADIUM DIOXIDE POWDER Public/Granted day:2015-09-10
Information query
