Doping-induced carrier density modulation in polymer field-effect transistors
Abstract:
A method of fabricating an organic field effect transistor (OFET), including forming a source contact, a drain contact, and a gate connection to a channel comprising semiconducting polymers, wherein the gate connection applies a field to the semiconductor polymers across a dielectric layer to modulate conduction along the semiconducting polymers between the source contact and the drain contact; and treating the semiconducting polymers, wherein the treating includes a chemical treatment that controls a carrier density, carrier mobility, threshold voltage, and/or contact resistance of the OFET.
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