Invention Grant
- Patent Title: Doping-induced carrier density modulation in polymer field-effect transistors
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Application No.: US15256160Application Date: 2016-09-02
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Publication No.: US10167362B2Publication Date: 2019-01-01
- Inventor: Byoung Hoon Lee , Alan J. Heeger
- Applicant: The Regents of the University of California
- Applicant Address: US CA Oakland
- Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee: THE REGENTS OF THE UNIVERSITY OF CALIFORNIA
- Current Assignee Address: US CA Oakland
- Agency: Gates & Cooper LLP
- Main IPC: C08G61/12
- IPC: C08G61/12 ; H01L51/00 ; H01L51/05

Abstract:
A method of fabricating an organic field effect transistor (OFET), including forming a source contact, a drain contact, and a gate connection to a channel comprising semiconducting polymers, wherein the gate connection applies a field to the semiconductor polymers across a dielectric layer to modulate conduction along the semiconducting polymers between the source contact and the drain contact; and treating the semiconducting polymers, wherein the treating includes a chemical treatment that controls a carrier density, carrier mobility, threshold voltage, and/or contact resistance of the OFET.
Public/Granted literature
- US20170069859A1 DOPING-INDUCED CARRIER DENSITY MODULATION IN POLYMER FIELD-EFFECT TRANSISTORS Public/Granted day:2017-03-09
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