Invention Grant
- Patent Title: Wet clean process for removing CxHyFz etch residue
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Application No.: US15334863Application Date: 2016-10-26
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Publication No.: US10167443B2Publication Date: 2019-01-01
- Inventor: Robert L. Bruce , Sebastian U. Engelmann , Eric A. Joseph , Mahmoud Khojasteh , Masahiro Nakamura , Satyavolu S. Papa Rao , Bang N. To , George G. Totir , Yu Zhu
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION , Zeon Corporation
- Applicant Address: US NY Armonk JP Tokyo
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,ZEON CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION,ZEON CORPORATION
- Current Assignee Address: US NY Armonk JP Tokyo
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: C11D3/04
- IPC: C11D3/04 ; C11D7/10 ; H01L21/02 ; H01L21/28 ; H01L21/311 ; C11D11/00 ; H01L29/66 ; H01L21/3065
Abstract:
A method for cleaning etch residues that may include treating an etched surface with an aqueous lanthanoid solution, wherein the aqueous lanthanoid solution removes an etch residue that includes a majority of hydrocarbons and at least one element selected from the group consisting of carbon, oxygen, fluorine, nitrogen and silicon. In one example, the aqueous solution may be cerium ammonium nitrate (Ce(NH4)(NO3)),(CAN).
Public/Granted literature
- US20170044470A1 WET CLEAN PROCESS FOR REMOVING CxHyFz ETCH RESIDUE Public/Granted day:2017-02-16
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