Invention Grant
- Patent Title: Negative patterning approach for ultra-narrow gap devices
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Application No.: US15249916Application Date: 2016-08-29
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Publication No.: US10167559B2Publication Date: 2019-01-01
- Inventor: Emanuel Loertscher , Marcel Mayor , Gabriel Fernando Puebla Hellman
- Applicant: International Business Machines Corporation , University of Basel
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Ryan, Mason & Lewis, LLP
- Agent Vazken Alexanian
- Main IPC: G03F7/00
- IPC: G03F7/00 ; C23C16/56 ; G01N21/552 ; C23C16/44 ; C23C16/04 ; G03F7/20 ; C23C14/04 ; G03F7/40 ; B05D1/32
Abstract:
A method for manufacturing a gap device includes forming a template structure on a substrate, depositing an active material layer on the substrate and on the template structure, wherein the active material layer covers at least top and side surfaces of the template structure, planarizing the active material layer, and selectively removing the template structure with respect to the active material layer and the substrate.
Public/Granted literature
- US20180057930A1 NEGATIVE PATTERNING APPROACH FOR ULTRA-NARROW GAP DEVICES Public/Granted day:2018-03-01
Information query
