Invention Grant
- Patent Title: N-type SiC single crystal and method for its production
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Application No.: US14914823Application Date: 2014-07-23
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Publication No.: US10167570B2Publication Date: 2019-01-01
- Inventor: Takayuki Shirai
- Applicant: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Applicant Address: JP Toyota
- Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
- Current Assignee Address: JP Toyota
- Agency: Oliff PLC
- Priority: JP2013-179669 20130830
- International Application: PCT/JP2014/069444 WO 20140723
- International Announcement: WO2015/029649 WO 20150305
- Main IPC: C30B23/00
- IPC: C30B23/00 ; C30B29/36 ; C30B29/66 ; C30B19/04 ; C30B9/10 ; C30B17/00 ; C30B19/06 ; C30B19/12
Abstract:
A n-type SiC single crystal with low resistivity and low threading dislocation density is provided, which is achieved by a n-type SiC single crystal containing germanium and nitrogen, wherein the density ratio of the germanium and the nitrogen [Ge/N] satisfies the relationship 0.17
Public/Granted literature
- US20160208411A1 N-TYPE SIC SINGLE CRYSTAL AND METHOD FOR ITS PRODUCTION Public/Granted day:2016-07-21
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