Invention Grant
- Patent Title: Persistent content in nonvolatile memory
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Application No.: US15393919Application Date: 2016-12-29
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Publication No.: US10169226B2Publication Date: 2019-01-01
- Inventor: Jared E. Hulbert , John C. Rudelic , Hongyu Wang
- Applicant: Micron Technology, Inc.
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Dorsey & Whitney LLP
- Main IPC: G06F12/08
- IPC: G06F12/08 ; G06F12/02 ; G06F9/50 ; G06F12/0888 ; G06F3/06 ; G06F12/0804 ; G06F12/1009 ; G11C11/56 ; G11C13/00 ; G11C16/04 ; G11C15/04
Abstract:
Applications may request persistent storage in nonvolatile memory. The persistent storage is maintained across power events and application instantiations. Persistent storage may be maintained by systems with or without memory management units.
Public/Granted literature
- US20170109275A1 PERSISTENT CONTENT IN NONVOLATILE MEMORY Public/Granted day:2017-04-20
Information query
