Invention Grant
- Patent Title: Neuron peripheral circuits for neuromorphic synaptic memory array based on neuron models
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Application No.: US14722008Application Date: 2015-05-26
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Publication No.: US10169701B2Publication Date: 2019-01-01
- Inventor: Kohji Hosokawa , Masatoshi Ishii , SangBum Kim , Chung H. Lam , Scott C. Lewis
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Ido Tuchman; Erik Johnson
- Main IPC: G06N3/063
- IPC: G06N3/063 ; G06N3/04

Abstract:
A neuromorphic memory system including neuromorphic memory arrays. Each neuromorphic memory array includes rows and columns of neuromorphic memory cells. A column of postsynaptic circuits is electrically coupled to postsynaptic spike timing dependent plasticity (STDP) lines. Each postsynaptic STDP line is coupled to a row of neuromorphic memory cells. A column of summing circuits is electrically coupled to postsynaptic leaky integrate and fire (LIF) lines. Each postsynaptic LIF line is coupled to the row of neuromorphic memory cells at a respective memory array. Each summing circuit provides a sum of signals from the postsynaptic LIF lines to a respective postsynaptic circuit.
Public/Granted literature
- US20160350643A1 NEURON PERIPHERAL CIRCUITS FOR NEUROMORPHIC SYNAPTIC MEMORY ARRAY BASED ON NEURON MODELS Public/Granted day:2016-12-01
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