Invention Grant
- Patent Title: Apparatus and methods for generating reference voltages for input buffers of a memory device
-
Application No.: US15614677Application Date: 2017-06-06
-
Publication No.: US10170176B2Publication Date: 2019-01-01
- Inventor: Sung Hwa Ok
- Applicant: SK hynix Inc.
- Applicant Address: KR Gyeonggi-do
- Assignee: SK Hynix Inc.
- Current Assignee: SK Hynix Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2016-0148988 20161109
- Main IPC: G11C11/408
- IPC: G11C11/408 ; G11C11/4099 ; G11C11/4074 ; G11C11/4093 ; G11C7/10 ; G11C16/30 ; G11C14/00 ; G11C5/14 ; G11C16/04 ; G11C16/10

Abstract:
Various embodiments of the invention relate generally to an electronic device, and more particularly, to a semiconductor memory device and an operating method thereof. A semiconductor memory device including a plurality of memory cells using an optimal input buffer reference voltage may include at least one input buffer receiving data to be stored in the plurality of memory cells, and an input buffer reference voltage control unit setting one of a plurality of internal voltages generated beforehand and having different voltage levels as a reference voltage of the at least one input buffer in response to a control signal received from a controller controlling the semiconductor memory device.
Public/Granted literature
- US20180130517A1 SEMICONDUCTOR MEMORY DEVICE AND OPERATING METHOD THEREOF Public/Granted day:2018-05-10
Information query
IPC分类: