Methods of operating a memory, and apparatus so configured, include applying a first voltage level to a first voltage node connected to a first end of a string of series-connected memory cells, applying a second voltage level to a second voltage node connected to a second end of the string, applying a third voltage level less than the first and second voltage levels to a control gate of a first memory cell of the string while applying the first and second voltage levels to the first and second voltage nodes, and applying a fourth voltage level less than the third voltage level to a control gate of a second memory cell of the string while applying the third voltage level to the control gate of the first memory cell, wherein the first memory cell is closer to the first voltage node than the second memory cell.