Invention Grant
- Patent Title: Superlattice lateral bipolar junction transistor
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Application No.: US15847250Application Date: 2017-12-19
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Publication No.: US10170302B2Publication Date: 2019-01-01
- Inventor: Karthik Balakrishnan , Stephen W. Bedell , Pouya Hashemi , Bahman Hekmatshoartabari , Alexander Reznicek
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Erik Johnson
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/165 ; H01L29/66 ; H01L29/15 ; H01L29/735 ; H01L29/10 ; H01L29/73 ; H01L29/08 ; H01L21/8249 ; H01L29/06 ; H01L29/423
Abstract:
A bipolar junction transistor includes an intrinsic base formed on a substrate. The intrinsic base includes a superlattice stack including a plurality of alternating layers of semiconductor material. A collector and emitter are formed adjacent to the intrinsic base on opposite sides of the base. An extrinsic base structure is formed on the intrinsic base.
Public/Granted literature
- US20180122925A1 SUPERLATTICE LATERAL BIPOLAR JUNCTION TRANSISTOR Public/Granted day:2018-05-03
Information query
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