Invention Grant
- Patent Title: Hardmask composition and method of forming pattern by using the hardmask composition
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Application No.: US15332287Application Date: 2016-10-24
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Publication No.: US10170325B2Publication Date: 2019-01-01
- Inventor: Sangwon Kim , Hyeonjin Shin , Seongjun Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2014-0066524 20140530; KR10-2014-0114530 20140829
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/308 ; H01L21/324 ; H01L21/311 ; H01L21/3213 ; C09D1/00 ; G03F7/16 ; G03F7/20 ; G03F7/32 ; G03F7/40
Abstract:
A hardmask composition may include a solvent and a 2-dimensional carbon nanostructure containing about 0.01 atom % to about 40 atom % of oxygen or a 2-dimensional carbon nanostructure precursor thereof. A content of oxygen in the 2-dimensional carbon nanostructure precursor may be lower than about 0.01 atom % or greater than about 40 atom %. The hardmask composition may be used to form a fine pattern.
Public/Granted literature
- US20170040178A1 HARDMASK COMPOSITION AND METHOD OF FORMING PATTERN BY USING THE HARDMASK COMPOSITION Public/Granted day:2017-02-09
Information query
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