Invention Grant
- Patent Title: Semiconductor pattern having semiconductor structures of different lengths
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Application No.: US15688346Application Date: 2017-08-28
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Publication No.: US10170328B1Publication Date: 2019-01-01
- Inventor: Chiang-Lin Shih , Shing-Yih Shih
- Applicant: NANYA TECHNOLOGY CORPORATION
- Applicant Address: TW New Taipei
- Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee: NANYA TECHNOLOGY CORPORATION
- Current Assignee Address: TW New Taipei
- Agency: Muncy, Geissler, Olds & Lowe, P.C.
- Main IPC: H01L21/308
- IPC: H01L21/308 ; H01L29/06 ; H01L21/3213 ; H01L21/311 ; H01L21/784

Abstract:
The present disclosure provides a semiconductor pattern and a method for preparing the same. The semiconductor pattern includes a substrate, a plurality of first semiconductor structures disposed over the substrate, a plurality of second semiconductor structures disposed over the substrate, and a semiconductor frame structure disposed over the substrate. The first semiconductor structures and the second semiconductor structures are alternately arranged. The semiconductor frame structure encircles the first semiconductor structures and the second semiconductor structures. The first semiconductor structures include a first length, the second semiconductor structures include a second length, and the first length of the first semiconductor structures is less than the second length of the second semiconductor structures.
Information query
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