Invention Grant
- Patent Title: Chemical mechanical polishing method for cobalt
-
Application No.: US15710892Application Date: 2017-09-21
-
Publication No.: US10170335B1Publication Date: 2019-01-01
- Inventor: Murali G. Theivanayagam , Hongyu Wang , Matthew Van Hanehem
- Applicant: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Applicant Address: US DE Newark
- Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Current Assignee: Rohm and Haas Electronic Materials CMP Holdings, Inc.
- Current Assignee Address: US DE Newark
- Agent John J. Piskorski
- Main IPC: H01L21/32
- IPC: H01L21/32 ; H01L21/321 ; C09G1/02
Abstract:
A process for chemical mechanical polishing a substrate containing cobalt and TiN to at least improve cobalt: TiN removal rate selectivity. The process includes providing a substrate containing cobalt and TiN; providing a polishing composition, containing, as initial components: water; an oxidizing agent; alanine or salts thereof; and, colloidal silica abrasives with diameters of ≤25 nm; and, providing a chemical mechanical polishing pad, having a polishing surface; creating dynamic contact at an interface between the polishing pad and the substrate; and dispensing the polishing composition onto the polishing surface at or near the interface between the polishing pad and the substrate; wherein some of the cobalt is polished away such that there is an improvement in the cobalt: TiN removal rate selectivity.
Information query
IPC分类:
