Invention Grant
- Patent Title: Subtractive methods for creating dielectric isolation structures within open features
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Application No.: US15096314Application Date: 2016-04-12
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Publication No.: US10170354B2Publication Date: 2019-01-01
- Inventor: Mark H. Somervell , Benjamen M. Rathsack
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Wood Herron & Evans LLP
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/31 ; H01L21/762 ; H01L21/027 ; H01L21/3105 ; H01L21/311
Abstract:
A method for partially filling an open feature on a substrate includes receiving a substrate having a layer with at least one open feature formed therein, wherein the open feature penetrates into the layer from an upper surface and includes sidewalls extending to a bottom of the open feature. The open feature is overfilled with an organic coating that covers the upper surface of the layer and extends to the bottom of the open feature. The method further includes removing a portion of the organic coating to expose the upper surface of the layer and recessing the organic coating to a pre-determined depth from the upper surface to create an organic coating plug of pre-determined thickness at the bottom of the open feature, and converting the chemical composition of the organic coating plug to create an inorganic plug.
Public/Granted literature
- US20160300756A1 SUBTRACTIVE METHODS FOR CREATING DIELECTRIC ISOLATION STRUCTURES WITHIN OPEN FEATURES Public/Granted day:2016-10-13
Information query
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