Invention Grant
- Patent Title: Reducing contact resistance in vias for copper interconnects
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Application No.: US14730581Application Date: 2015-06-04
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Publication No.: US10170358B2Publication Date: 2019-01-01
- Inventor: Conal E. Murray , Chih-Chao Yang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/768
- IPC: H01L21/768 ; H01L23/522 ; H01L23/528 ; H01L23/532
Abstract:
A method of forming an electrical transmission structure that includes forming an opening through an interlevel dielectric layer to expose at least one electrically conductive feature and forming a shield layer on the opening. A gouge is formed in the electrically conductive feature through the opening using a subtractive method during which the shield layer protects the interlevel dielectric layer from being damaged by the subtractive method. A contact is formed within the opening in electrical communication with the at least one electrically conductive feature.
Public/Granted literature
- US20160358859A1 REDUCING CONTACT RESISTANCE IN VIAS FOR COPPER INTERCONNECTS Public/Granted day:2016-12-08
Information query
IPC分类:
