Invention Grant
- Patent Title: Semiconductor device
-
Application No.: US15462316Application Date: 2017-03-17
-
Publication No.: US10170383B2Publication Date: 2019-01-01
- Inventor: Yasuo Konishi
- Applicant: Mitsubishi Electric Corporation
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Studebaker & Brackett PC
- Priority: JP2016-178595 20160913
- Main IPC: H01L23/10
- IPC: H01L23/10 ; H01L23/057 ; H01L23/373 ; H01L23/00 ; H01L23/24 ; H01L23/053

Abstract:
A semiconductor device includes: an insulating board; a circuit pattern disposed on the insulating board; a semiconductor chip connected to the circuit pattern; a case disposed on the insulating board to surround the circuit pattern and the semiconductor chip and not bonded to the insulating board; and a cured resin disposed in the case to seal the circuit pattern and the semiconductor chip.
Public/Granted literature
- US20180076104A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-03-15
Information query
IPC分类: