Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15041858Application Date: 2016-02-11
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Publication No.: US10170402B2Publication Date: 2019-01-01
- Inventor: Yosuke Imazeki , Soshi Kuroda
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Tokyo
- Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee: RENESAS ELECTRONICS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2013-158233 20130730
- Main IPC: H01L23/498
- IPC: H01L23/498 ; H01L25/065 ; H01L23/00 ; H01L21/56 ; H01L23/31

Abstract:
A semiconductor device includes a wiring substrate having an upper surface, a plurality of terminals formed on the upper surface, and a lower surface opposite to the upper surface, a first semiconductor chip having a first main surface, a plurality of first electrodes formed on the first main surface, and a first rear surface opposite to the first main surface, and mounted over the upper surface of the wiring substrate such that the first rear surface of the first semiconductor chip faces the upper surface of the wiring substrate, and a plurality of wires electrically connected with the plurality of terminals, respectively.
Public/Granted literature
- US20160163625A1 SEMICONDUCTOR DEVICE Public/Granted day:2016-06-09
Information query
IPC分类: