Invention Grant
- Patent Title: Biconvex low resistance metal wire
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Application No.: US15189720Application Date: 2016-06-22
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Publication No.: US10170419B2Publication Date: 2019-01-01
- Inventor: Praneet Adusumilli , Alexander Reznicek , Oscar van der Straten
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Agent Daniel P. Morris, Esq.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L23/528 ; H01L23/532 ; H01L21/768
Abstract:
At least one opening having a biconvex shape is formed into a dielectric material layer. A void-free metallization region (interconnect metallic region and/or metallic contact region) is provided to each of the openings. The void-free metallization region has the biconvex shape and exhibits a low wire resistance.
Public/Granted literature
- US20170373006A1 BICONVEX LOW RESISTANCE METAL WIRE Public/Granted day:2017-12-28
Information query
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