Invention Grant
- Patent Title: Semiconductor structure and method of manufacturing the same
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Application No.: US15635686Application Date: 2017-06-28
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Publication No.: US10170468B1Publication Date: 2019-01-01
- Inventor: Wen-Hsin Lin , Shin-Cheng Lin , Cheng-Tsung Wu , Yu-Hao Ho
- Applicant: Vanguard International Semiconductor Corporation
- Applicant Address: TW Hsinchu
- Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee: VANGUARD INTERNATIONAL SEMICONDUCTOR CORPORATION
- Current Assignee Address: TW Hsinchu
- Agency: Birch, Stewart, Kolasch & Birch, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/74 ; H01L29/10 ; H01L29/78 ; H01L27/07 ; H01L29/808 ; H01L29/861
Abstract:
A semiconductor structure is provided. A semiconductor substrate has a first conductivity type. A first well is formed in the semiconductor substrate and has a second conductivity type. A first well includes a first region and a second region. The dopant concentration of the first region is higher than the dopant concentration of the second region. A second well has the first conductivity type and is formed in the first region. A first doped region is formed in the first region and has the second conductivity type different than the first conductivity type. The second doped region has the first conductivity type and is formed in the second well. A third doped region has the first conductivity type and is formed in the second region. A fourth doped region has the second conductivity type and is formed in the first region.
Public/Granted literature
- US20190006355A1 SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2019-01-03
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