According to one embodiment, a semiconductor device includes an underlying metal film and a metal film. The underlying metal film is a tantalum-aluminum film having an aluminum content of more than 50 atomic % and less than 85 atomic %, a tungsten-zirconium film having a zirconium content of less than 40 atomic %, a tungsten-titanium film having a titanium content of less than 80 atomic %, or a tungsten film. The metal film is provided on the underlying metal film and in contact with the underlying metal film. The metal film contains at least one of tungsten and molybdenum, and has a main orientation of (100) or (111).