Invention Grant
- Patent Title: Magnetoresistive element and memory device
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Application No.: US15261755Application Date: 2016-09-09
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Publication No.: US10170519B2Publication Date: 2019-01-01
- Inventor: Youngmin Eeh , Toshihiko Nagase , Daisuke Watanabe , Koji Ueda , Makoto Nagamine , Kazuya Sawada
- Applicant: Toshiba Memory Corporation
- Applicant Address: JP Tokyo
- Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee: TOSHIBA MEMORY CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz & Volek PC
- Main IPC: G11C11/16
- IPC: G11C11/16 ; H01L27/22 ; H01L43/02 ; H01L43/10 ; H01L49/02

Abstract:
According to one embodiment, a magnetoresistive element includes a first metal layer having a body-centered cubic structure, a second metal layer having a hexagonal close-packed structure on the first metal layer, a metal nitride layer on the second metal layer, a first magnetic layer on the metal nitride layer, an insulating layer on the first magnetic layer, and a second magnetic layer on the insulating layer.
Public/Granted literature
- US20170263676A1 MAGNETORESISTIVE ELEMENT AND MEMORY DEVICE Public/Granted day:2017-09-14
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