Invention Grant
- Patent Title: Magnetic memory with metal oxide etch stop layer and method for manufacturing the same
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Application No.: US15626686Application Date: 2017-06-19
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Publication No.: US10170536B1Publication Date: 2019-01-01
- Inventor: Hung-Wen Hsu , Yen-Shuo Su , Jiech-Fun Lu , Kuan Chih Huang , Tze Yun Chou , Chun-Mao Chiu , Tao-Sheng Chang
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: WPAT, P.C., Intellectual Property Attorneys
- Agent Anthony King
- Main IPC: H01L43/08
- IPC: H01L43/08 ; H01L49/02 ; H01L21/768 ; H01L23/31 ; H01L23/528 ; H01L23/522
Abstract:
A semiconductor structure is disclosed. The semiconductor structure includes: a substrate; a first passivation layer over the substrate; a second passivation layer over the first passivation layer; a magnetic layer in the second passivation layer; and an etch stop layer between the magnetic layer and the first passivation layer, wherein the etch stop layer includes at least one acid resistant layer, and the acid resistant layer includes a metal oxide. A method for manufacturing a semiconductor structure is also disclosed.
Public/Granted literature
- US20180366536A1 MAGNETIC MEMORY WITH METAL OXIDE ETCH STOP LAYER AND METHOD FOR MANUFACTURING THE SAME Public/Granted day:2018-12-20
Information query
IPC分类:
