- Patent Title: Localized and self-aligned punch through stopper doping for finFET
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Application No.: US15782908Application Date: 2017-10-13
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Publication No.: US10170558B2Publication Date: 2019-01-01
- Inventor: Effendi Leobandung , Tenko Yamashita
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/338
- IPC: H01L21/338 ; H01L29/10 ; H01L21/8234 ; H01L29/66 ; H01L21/02 ; H01L21/223 ; H01L21/324 ; H01L29/161 ; H01L29/78 ; H01L27/088 ; H01L29/36
Abstract:
A method for doping punch through stoppers (PTSs) includes forming fins in a monocrystalline substrate, forming a dielectric layer at a base portion between the fins and forming spacers on sidewalls of the fins down to a top portion of the dielectric layer. The dielectric layer is recessed to form gaps between the top portion of the dielectric layer and the spacer to expose the fins in the gaps. The fins are doped through the gaps to form PTSs in the fins.
Public/Granted literature
- US20180047812A1 LOCALIZED AND SELF-ALIGNED PUNCH THROUGH STOPPER DOPING FOR FINFET Public/Granted day:2018-02-15
Information query
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