Invention Grant
- Patent Title: Gallium nitride semiconductor device with improved termination scheme
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Application No.: US13763649Application Date: 2013-02-09
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Publication No.: US10170563B2Publication Date: 2019-01-01
- Inventor: Tinggang Zhu
- Applicant: Alpha and Omega Semiconductor Incorporated
- Applicant Address: US CA Sunnyvale
- Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee: Alpha and Omega Semiconductor Incorporated
- Current Assignee Address: US CA Sunnyvale
- Agent Bo-Lin Lin
- Main IPC: H01L29/20
- IPC: H01L29/20 ; H01L29/872 ; H01L29/66 ; H01L29/06
Abstract:
This invention discloses a gallium nitride based semiconductor power device disposed in a semiconductor substrate. The power device comprises a termination area disposed at a peripheral area of the semiconductor power device comprises a termination structure having at least a guard ring disposed in a trench filled with doped gallium-based epitaxial layer therein.
Public/Granted literature
- US20180182853A9 GALLIUM NITRIDE SEMICONDUCTOR DEVICE WITH IMPROVED TERMINATION SCHEME Public/Granted day:2018-06-28
Information query
IPC分类:
