Embodiments of the disclosure generally provide methods of forming thin film transistor (TFT) device structure with good interface management between a metal electrode layer and a nearby insulating material so as to provide high electrical performance devices, or for other suitable display applications. In one embodiment, a thin film transistor structure includes a metal electrode layer disposed on a barrier layer formed above a gate insulating material layer, an interface layer disposed on the metal electrode layer, wherein the interface layer is an oxygen free dielectric material layer sized to be formed predominately on the metal electrode layer, and an insulating material layer disposed on the interface layer, wherein the insulating material layer is an oxygen containing dielectric layer.