Invention Grant
- Patent Title: Surface treatment and passivation for high electron mobility transistors
-
Application No.: US15600165Application Date: 2017-05-19
-
Publication No.: US10170579B2Publication Date: 2019-01-01
- Inventor: Han-Chin Chiu , Cheng-Yuan Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/20 ; H01L29/778 ; H01L23/29 ; H01L29/423 ; H01L29/51 ; H01L29/417
Abstract:
A High Electron Mobility Transistor (HEMT) and a method of forming the same are disclosed. The HEMT includes a first III-V compound layer having a first band gap and a second III-V compound layer having a second band gap over the first III-V compound layer, wherein the second band gap is greater than the first band gap. The HEMT further includes a first oxide layer over the second III-V compound layer; a first interfacial layer over the first oxide layer; and a passivation layer over the first interfacial layer.
Public/Granted literature
- US20170263729A1 Surface Treatment and Passivation for High Electron Mobility Transistors Public/Granted day:2017-09-14
Information query
IPC分类:
