Invention Grant
- Patent Title: Method of forming vertical transport fin field effect transistor with high-K dielectric feature uniformity
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Application No.: US15797721Application Date: 2017-10-30
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Publication No.: US10170588B1Publication Date: 2019-01-01
- Inventor: Tenko Yamashita , Chun Wing Yeung , Chen Zhang
- Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Tutunjian & Bitetto, P.C.
- Agent Vazken Alexanian
- Main IPC: H01L21/8234
- IPC: H01L21/8234 ; H01L29/66 ; H01L29/78 ; H01L29/10 ; H01L29/51 ; H01L21/02
Abstract:
A method of forming a vertical transport fin field effect transistor is provided. The method includes forming a doped layer on a substrate, and forming a multilayer fin on the doped layer, where the multilayer fin includes a lower trim layer portion, an upper trim layer portion, and a fin channel portion between the upper and lower trim layer portions. A portion of the lower trim layer portion is removed to form a lower trim layer post, and a portion of the upper trim layer portion is removed to form an upper trim layer post. An upper recess filler is formed adjacent to the upper trim layer post, and a lower recess filler is formed adjacent to the lower trim layer post. A portion of the fin channel portion is removed to form a fin channel post between the upper trim layer post and lower trim layer post.
Information query
IPC分类:
