Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15664767Application Date: 2017-07-31
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Publication No.: US10170613B2Publication Date: 2019-01-01
- Inventor: Yu-Syuan Lin , Jiun-Lei Yu , Ming-Cheng Lin , Chun Lin Tsai
- Applicant: Taiwan Semiconductor Manufacturing Company Ltd.
- Applicant Address: TW Hsinchu
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes and Boone, LLP
- Main IPC: H02M3/00
- IPC: H02M3/00 ; H01L29/06 ; H01L29/10 ; H01L29/20 ; H01L29/47 ; H02M3/158 ; H01L29/778
Abstract:
A semiconductor device includes a transistor, a semiconductor layer, an active region and a conductive layer. The active region is in the semiconductor layer. The conductive layer is configured to maintain a channel in the active region when the transistor is triggered to be conducted.
Public/Granted literature
- US20170358671A1 SEMICONDUCTOR DEVICE Public/Granted day:2017-12-14
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